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0.12mm Dia., TO-46 Package, InGaAs Photodiode

InGaAs Photodiodes (FC Receptacle , TO-5, TO-46)

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Stock #55-754 5-7 Days
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NT$3,448
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NT$3,448
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NT$2,975
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Spectral Response (nm):
900 - 1700
Responsivity @ 1310nm (A/W):
0.8 minimum / 0.9 typical
Responsivity @ 1550nm (A/W):
0.9 minimum / 0.95 typical
Rise/ Fall Time @ VR=5V (ns):
0.3
Capacitance @ VR=5V (pF):
2 typical
Noise Equivalent Power NEP (W/ Hz1/2):
4.5 x 10-15
Maximum Forward Current (mA):
5
Maximum Reverse Current (mA):
2
Maximum Reverse Voltage (V):
20
Dark Current @ VR=5V (nA):
0.05 typical / 2 maximum
Package:
TO-46

Product Details

Type of Optics:
Ball Lens
Type:
InGaAs Photodiode

Physical & Mechanical Properties

Active Area Diameter (mm):
0.12

Regulatory Compliance

RoHS:
Certificate of Conformance:

產品系列說明

銦鎵砷光電二極體(InGaAs )在 900 nm ~ 1700 nm波長範圍內具有極佳的響應度,感應作動區範圍從 0.07 mm ~ 3.0 mm不等。光電二極體的感應作動區尺寸小於 1 mm,在 1100 nm ~ 1620 nm波長範圍內具有低電容、低暗電流和高回應度的特點,適用於高速資料通訊和電信應用。光電二極體的感應作動區尺寸在 1 mm及以上,具有大感應作動區、低雜訊和高分流電阻的特點,可實現對微弱信號的高靈敏度。InGaAs 光電二極體採用 TO-46、TO-18 或 TO-5 封裝,不同封裝會帶有球透鏡或雙面抗反射鍍膜窗鏡。這些光電二極體是多種研究和 OEM 應用的理想之選,包括紅外雷射對準、醫療診斷和化學分析。

注意:為確保入射光的中心位置,建議使用 聚焦透鏡 或 針孔,因為光電二極體晶片邊緣的不均勻性會導致探測器響應率降低。

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How do I use your silicon detectors?

Amplifiers

Breakdown Voltage (BDV)

Capacitance

Dark Current

Detectivity

Fall Time

Noise Equivalent Power (NEP)

Photodiode

Photosensitivity

Photovoltaic Effect

Quantum Efficiency (QE)

Responsivity

RMS Noise

Shunt Resistance

Silicon Detector

Spectral Response

I am trying to get a sample read out from a laser diode on an oscilloscope. I get a good pulse signal if I shine my keychain flashlight on the detector, but a very noisy signal from the diode itself. What could be causing the noise in this system?

Acceptance Angle

Basic Principles of Silicon Detectors

Silicon Detectors are used to transform light energy into an electrical current. Find out more about the different operation modes and terms at Edmund Optics.

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Cut-Off Wavelength

Cut-On Wavelength

Dynamic Range

Signal-to-Noise Ratio (SNR)

 
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