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34mm2 Suppressed NIR DUV Photodiode w/Metal Housing

DUV Photodiodes

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Stock #84-599 聯絡我們
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NT$4,410
Qty 1-4
NT$4,410
Qty 5+
NT$3,920
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Specifications

概況

Rise Time (μs):
2 @ 0 V, 1 kΩ

物理和機械特性

Size of Active Area (mm):
5.8 x 5.8
Active Area (mm2):
34.0

光學特性

Peak Response Wavelength (nm):
720.00

電氣性能

Responsivity @ 980nm (A/W):
0.36
Shunt Resistance @ V=-10mV (GΩ):
Minimum: 0.5
Typical: 5
Responsivity @ 633nm (A/W):
0.34
Responsivity @ 200nm (A/W):
0.12
Capacitance @ VR=0V (pF):
800.00
Noise Equivalent Power NEP (W/ Hz1/2):
1.6 x 10-14 @ 0 V, 200nm
Maximum Reverse Voltage (V):
5.00

硬體與介面連接

Connector:
TO-8

環境和耐用性因素

Operating Temperature (°C):
-20 to +60
Storage Temperature (°C):
-55 to +80

Regulatory Compliance

RoHS:
Certificate of Conformance:

產品概覽

  • 出眾的紫外線敏感度
  • 高分流電阻
  • 低電容

深紫外線光電二極體非常適用於多種應用,包括紫外線分光光度測量法與分析及醫療設備。深紫外線光電二極體經過精心設計,可增強200 – 400nm範圍內的回應能力,並將敏感度拓展至190nm。深紫外線光電二極體具有石英窗鏡,並採用金屬或陶瓷外罩。此外,我們也提供近紅外效能受抑制的機型。

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